Triarylamine-based porphyrins in OFET applications: A series of methoxytriarylamine-based metalloporphyrins have been synthesized. Solution-processed BGTC architecture has been fabricated, ensuring uniform thin films for efficient charge transport. They enhanced OFET performance, with Ni-based porphyrin compound achieving 2.39 cm²/Vs.

Abstract

Metalloporphyrins are widely studied as active materials for their high performance in OFETs. In this paper, the electron-donating methoxyphenyl functionalized triarylamine is incorporated at the meso-position of porphyrin to improve the field-effect mobility. The high LUMO energy levels of all the metalloporphyrins ensure these candidates are suitable for charge ejection properties. SEM analysis for the spin-coated thin films of the compounds exhibited homogeneous and maximum surface coverage area. Bottom-gate/top-contact architecture (BGTC) was employed to fabricate the field-effect transistors using the solution-processable method. Among the compounds studied, the nickel porphyrin resulted in a higher charge carrier mobility of 2.39 cm²/Vs and an on/off ratio of 10⁷. The results authenticated that these metalloporphyrins are promising semiconducting materials for OFET device applications.